Other articles related with "floating gate":
56107 Si-De Song(宋思德), Guo-Zhu Liu(刘国柱), Qi He(贺琪), Xiang Gu(顾祥), Gen-Shen Hong(洪根深), and Jian-Wei Wu(吴建伟)
  Combined effects of cycling endurance and total ionizing dose on floating gate memory cells
    Chin. Phys. B   2022 Vol.31 (5): 56107-056107 [Abstract] (323) [HTML 1 KB] [PDF 1359 KB] (51)
127102 Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰)
  Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2017 Vol.26 (12): 127102-127102 [Abstract] (593) [HTML 0 KB] [PDF 495 KB] (197)
47305 Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇)
  A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates
    Chin. Phys. B   2017 Vol.26 (4): 47305-047305 [Abstract] (774) [HTML 1 KB] [PDF 684 KB] (434)
67102 Zhao-wen Yan(闫兆文), Jiao Wang(王娇), Jian-li Qiao(乔坚栗), Wen-jie Chen(谌文杰), Pan Yang(杨盼), Tong Xiao(肖彤), Jian-hong Yang(杨建红)
  Numerical simulation study of organic nonvolatile memory with polysilicon floating gate
    Chin. Phys. B   2016 Vol.25 (6): 67102-067102 [Abstract] (738) [HTML 1 KB] [PDF 701 KB] (324)
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